tm ?2006 fairchild semiconductor corporation 1 www.fairchildsemi.com fgd3n60lsd rev. b fgd3n60lsd igbt september 2006 fgd3n60lsd igbt features ? high current capability ? very low saturation voltage : v ce(sat) = 1.2 v @ i c = 3a ? high input impedance applications ? hid lamp applications ? piezo fuel injection applications description fairchild's insulated gate bipolar transistors (igbts) provide very low conduction losses. the device is designed for applica - tions where very low on-voltage drop is a required feature. d-pak g e c g c e g c e absolute maximum ratings symbol description fgd3n60lsd units v ces collector-emitter voltage 600 v v ges gate-emitter voltage 25 v i c collector current @ t c = 25 c 6 a collector current @ t c = 100 c 3 a i cm (1) pulsed collector current (1) 25 a i f diode continous forward current @ t c = 100 c 3 a i fm diode maximum forward current 25 a p d maximum power dissipation @ t c = 25 c 40 w derating factor 0.32 w/ c t j operating junction temperature -55 to +150 c t stg storage temperature range -55 to +150 c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 250 c notes : (1) repetitive rating : pulse width limited by max. junction temperature thermal characteristics symbol parameter typ. max. units r jc (igbt) thermal resistance, junction-to-case -- 3.1 c / w r ja thermal resistance, junction-to-ambient (pcb mount) (2) -- 100 c / w notes : (2) mounted on 1? squre pcb (fr4 or g-10 material)
2 www.fairchildsemi.com fgd3n60lsd rev. b fgd3n60lsd igbt package marking and ordering information device marking device package reel size tape width quantity fgd3n60lsd fgd3n60lsdtm d-pak 380mm 16mm 2500 electrical characteristi cs of the igbt t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max. units off characteristics bv ces collector-emitter breakdown voltage v ge = 0v, i c = 250ua 600 -- -- v ? b vces / ? t j temperature coefficient of breakdown voltage v ge = 0v, i c = 1ma -- 0.6 -- v/ c i ces collector cut-off current v ce = v ces , v ge = 0v -- -- 250 ua i ges g-e leakage current v ge = v ges , v ce = 0v -- -- 100 na on characteristics v ge(th) g-e threshold voltage i c = 3ma, v = v ge 2.5 3.2 5.0 v v ce(sat) collector to emitter saturation voltage i c = 3a , v ge = 10v -- 1.2 1.5 v i c = 6a , v ge = 10v -- 1.8 -- v dynamic characteristics c ies input capacitance v ce = 25v , v ge = 0v, f = 1mhz -- 185 -- pf c oes output capacitance -- 20 -- pf c res reverse transfer capacitance -- 5.5 -- pf switching characteristics t d(on) turn-on delay time v cc = 480 v, i c = 3a, r g = 470 ? , v ge = 10v, inductive load, t c = 25 c -- 40 -- ns t r rise time -- 40 -- ns t d(off) turn-off delay time -- 600 -- ns t f fall time -- 600 -- ns e on turn-on switching loss -- 250 -- uj e off turn-off switching loss -- 1.00 -- mj e ts total switching loss -- 1.25 -- mj t d(on) turn-on delay time v cc = 480 v, i c = 3a, r g = 470 ? , v ge = 10v , inductive load, t c = 125 c -- 40 -- ns t r rise time -- 45 -- ns t d(off) turn-off delay time -- 620 -- ns t f fall time -- 800 -- ns e on turn - on switching loss -- 300 -- uj e off turn - off switching loss -- 1.9 -- mj e ts total switching loss -- 2.2 -- mj q g total gate charge v ce = 480 v, i c = 3a, v ge = 10v -- 12.5 -- nc q ge gate-emitter charge -- 2.8 -- nc q gc gate-collector charge -- 4.9 -- nc l e internal emitter inductance measured 5mm from pkg -- 7.5 -- nh ce
3 www.fairchildsemi.com fgd3n60lsd rev. b fgd3n60lsd igbt electrical characteristics of diode t c = 25 c unless otherwise noted symbol parameter test conditions min. typ. max. units v fm diode forward voltage i f = 3a t c = 25 c -- 1.5 1.9 v t c = 100 c -- 1.55 -- t rr diode reverse recovery time i f = 3a, di/dt = 100a/us v r = 200v t c = 25 c -- 234 -- ns t c = 100 c -- -- -- i rr diode peak reverse recovery current t c = 25 c -- 2.64 -- a t c = 100 c -- -- -- q rr diode reverse recovery charge t c = 25 c -- 309 -- nc t c = 100 c -- -- --
4 www.fairchildsemi.com fgd3n60lsd rev. b fgd3n60lsd igbt typical performance characteristics figure 1. typical output characteristics figure 2. typical output characteristics 02468 0 6 12 18 24 30 20v 15v 10v v ge = 8v common emitter t c = 25 c collector current, i c [a] collector-emitter voltage, v ce [v] 02468 0 6 12 18 24 30 common emitter t c = 125 c v ge = 8v 20v 15v 10v collector-emitter voltage, v ce [v] collector current, i c [a] figure 3. typical output characteristi cs figure 4. transfer characteristics 110 0 2 4 6 8 10 collector current, i c [a] common emitter v ce = 20v t c = 25 c t c = 125 c gate-emitter voltage, v ge [v] 0.1 1 10 0 2 4 6 8 10 collector-emitter voltage, v ce [v] collector current, i c [a] common emitter v ge = 10v t c = 25 c t c = 125 c figure 5. saturation voltage vs. case 0 30 60 90 120 150 0 1 2 3 i c = 6a i c = 3a i c = 1.5a common emitter v ge = 10v collector-emitter voltage, v ce [v] case temperature, t c [ c] 110 0 100 200 300 400 500 600 cres coes cies collector - emitter voltage, v ce [v] capacitance [pf] common emitter v ge = 0v, f = 1mhz t c = 25 c figure 6. capacitance characteristics
5 www.fairchildsemi.com fgd3n60lsd rev. b fgd3n60lsd igbt typical performance characteristics (continued) figure 7. gate charge figure 8. turn-on characteristics vs. gate resistance 200 400 600 800 1000 10 100 1000 common emitter v cc = 480v, v ge = 10v i c = 3a t c = 25 c t c = 125 c ton tr switching time [ns] gate resistance, r g [ ? ] 024681012 0 2 4 6 8 10 12 common emitter r l = 160 ? vcc = 480v t c = 25 c gate - emitter voltage, v ge [v] gate charge, q g [nc] figure 9. turn-off characteristics vs. fi gure 10. switching loss vs. gate resistance gate resistance 200 400 600 800 1000 100 1000 10000 toff tf switching time [ns] gate resistance, r g [ ? ] common emitter v cc = 480v, v ge = 10v i c = 3a t c = 25 c t c = 125 c 200 400 600 800 1000 10 100 1000 10000 switching loss [ j] gate resistance, r g [ ? ] eon eoff common emitter v cc = 480v, v ge = 10v i c = 3a t c = 25 c t c = 125 c figure 11. turn-on characteristics vs. figure 12. turn-off characteristics vs. collector current collector current 234 10 100 tr ton switching time [ns] collector current, i c [a] common emitter vcc = 480v, v ge = 10v r g = 470 ? t c = 25 c t c = 125 c 234 100 1000 tf toff switching time [ns] collector current, i c [a] common emitter vcc = 480 v, v ge = 10v r g = 470 ? t c = 25 c t c = 125 c
6 www.fairchildsemi.com fgd3n60lsd rev. b fgd3n60lsd igbt typical performance characteristics (continued) figure 13. switching loss vs. collector current figure 14. forward characteristics 01234 0.1 1 10 100 forward current, i f [a] forward voltage drop, v f [v] tc = 25 c tc = 100 c 234 100 1000 eon eoff switching loss [ j] collector current, i c [a] common emitter vcc = 480 v, v ge = 10v r g = 470 ? t c = 25 c t c = 125 c figure 15. forward voltage drop vs tj figure 16. soa characteristics 25 50 75 100 125 1.2 1.6 2.0 2.4 2.8 i f =3 a i f =6 a forward voltage drop, v f [v] junction temperature, tj [ c] i f =1.5 a 0.1 1 10 100 1000 0.01 0.1 1 10 100 50 s 100 s 1ms dc operation ic max (pulsed) ic max (continuous) single nonrepetitive pulse tc = 25 c curves must be derated linearly with increase in temperature collector current, ic [a] collector - emitter voltage, v ce [v] figure 17. transient thermal impedance of igbt 1e-5 1e-4 1e-3 0.01 0.1 1 10 0.01 0.1 1 10 rectangular pulse duration [sec] thermal response [zthjc] 0.5 0.2 0.1 0.05 0.02 0.01 single pulse pdm t1 t2 duty factor d = t1 / t2 peak tj = pdm zthjc + t c
7 www.fairchildsemi.com fgd3n60lsd rev. b fgd3n60lsd igbt mechanical dimensions d-pak dimensions in millimeters
8 www.fairchildsemi.com fgd3n60lsd rev. b fgd3n60lsd igbt trademarks the following are registered and unregister ed trademarks fairchild semiconductor owns or is authorized to use and is not intend ed to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserv es the right to make changes without furt her notice to any products herein to improve reliability, function or design. fairchild does not assum e any liability arising out of the application or use of any product or circuit described herein; neither does it conv ey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fa irchild?s worldwide terms and conditions, specifically the warranty therein, whi ch covers these products. life support policy fairchild?s products are not authorized for use as critical compon ents in life support de vices or systems without the express writte n approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions fo r use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perf orm can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fast ? fastr? fps? frfet? fact quiet series? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? scalarpump? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinyboost? tinybuck? tinypwm? tinypower? tinylogic ? tinyopto? trutranslation? uhc? unifet? ultrafet ? vcx? wire? across the board. around the world.? the power franchise ? programmable active droop? datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. spec ifications may change in any manner without notice. preliminary first production this datas heet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datas heet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specific ations on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. rev. i20
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